| Yazarlar (2) |
Doç. Dr. Abdullah AKKAYA
Kırşehir Ahi Evran Üniversitesi, Türkiye |
Enise Ayyıldız
Erciyes Üniversitesi, Türkiye |
| Özet |
| The electrical performance of double layered Ohmic contacts not only depends on layer thicknesses, annealing temperatures and annealing time etc. but also Ohmic contact metals and reactions with substrates and each other. Furthermore, oxidation tendency of Ohmic contact metals is highly important for contact quality and stability. In this study, we have investigated Ti/Al Ohmic contact formation on undoped AlGaN substrates by X-ray photoelectron spectroscopy (XPS) depth profile analysis. We aimed to reveal the oxide compounds and reaction products of metals and dependencies to the contact depth. In survey mode and depth profile mode five atoms core level (Ga 3d, Al 2p, N 1 s, Ti 2p and O 1 s) was observed and the XPS core level peaks were convoluted with Gaussian profiles to identify the origin of the peaks. Our results show that Ohmic contact metals strongly incorporated with oxygen, leading to high specific contact resistivity (? |
| Anahtar Kelimeler |
| Depth profile | Ohmic contact | TiAl3 metallic alloy | TLM | XPS |
| Bildiri Türü | Tebliğ/Bildiri |
| Bildiri Alt Türü | Tam Metin Olarak Yayınlanan Tebliğ (Uluslararası Kongre/Sempozyum) |
| Bildiri Niteliği | Web of Science Kapsamındaki Kongre/Sempozyum |
| DOI Numarası | 10.1016/j.matpr.2021.03.268 |
| Bildiri Dili | İngilizce |
| Kongre Adı | 2nd International Congress on Semiconductor Materials and Devices (ICSMD 2018) |
| Kongre Tarihi | 28-08-2018 / 31-08-2018 |
| Basıldığı Ülke | Türkiye |
| Basıldığı Şehir | Ardahan |
| Atıf Sayıları | |
| WoS | 3 |
| SCOPUS | 3 |
