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Electrical characterization of Ni/Al0.09Ga0.91N Schottky barrier diodes as a function of temperature      
Yazarlar
Doç. Dr. Abdullah AKKAYA Doç. Dr. Abdullah AKKAYA
Kırşehir Ahi Evran Üniversitesi
L. Esmer
T. Karaaslan
H. Cetin
E. Ayyildiz
Özet
The current-voltage characteristics (I-V) of Ni/Al0.09Ga0.91N Schottky barrier diodes (SBDs) prepared with a photolithography and lift-off techniques were investigated in the wide temperature range of 100-310 K. The I-V characteristics of the devices were analyzed on the basis of the thermionic emission (TE) theory. An abnormal decrease in the experimental effective barrier height and an increase in ideality factor with a decrease in the temperature were observed. The temperature dependence of the effective Schottky barrier height (SBH) was explained with the presence of the laterally barrier height inhomogeneity at the metal-semiconductor interface. In addition, the modified Richardson plots were used to determine experimental Richardson constants in the three temperature regions. (C) 2014 Elsevier Ltd. All rights reserved,
Anahtar Kelimeler
GaN semiconductor | Schottky barrier height | Richardson constant | Therminoic emission | Barrier inhomogeneity
Makale Türü Özgün Makale
Makale Alt Türü SSCI, AHCI, SCI, SCI-Exp dergilerinde yayımlanan tam makale
Dergi Adı MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
Dergi ISSN 1369-8001
Dergi Tarandığı Indeksler SCI
Makale Dili İngilizce
Basım Tarihi 12-2014
Cilt No 28
Sayı 1
Sayfalar 127 / 134
Doi Numarası 10.1016/j.mssp.2014.07.053
Makale Linki https://linkinghub.elsevier.com/retrieve/pii/S1369800114004338