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Quantum size effect on the electronic transitions of GaAs/AlGaAs dots under twisted light       
Yazarlar
Dr. Öğr. Üyesi Fatih KOÇ
Iğdır Üniversitesi, Türkiye
Koray Köksal
Bitlis Eren Üniversitesi, Türkiye
Özet
The aim of the study is to investigate two main effects on the electronic transitions in spherically symmetric semiconductor quantum dots. One of them is the result of the modification of the core/shell size for core shell semiconductors. Other effect is obtained from the adjustment of the parameters such as topological charge (due to the angular momentum of light) and radial node of applying twisted laser light. We are expecting to observe some special transitions and varying probability strength which cannot be observed in the case of usual linear polarized electromagnetic field. Indeed, the angular momentum of the twisted light can be transferred to the semiconductor quantum dot system and it can increase the transition probability for some quantum sizes and for some laser parameters. Because the well confinement of the electrons and the strength of the transition are quite important for the device application, as a first time, we introduce that the twisted light parameters can be used for the manipulation of the transitions. (C) 2015 Elsevier Ltd. All rights reserved.
Anahtar Kelimeler
Semiconductor quantum dots, Optical vortex, Optical manipulation, Angular momentum transfer
Makale Türü Özgün Makale
Makale Alt Türü SSCI, AHCI, SCI, SCI-Exp dergilerinde yayımlanan tam makale
Dergi Adı Superlattices and Microstructures
Dergi ISSN 0749-6036
Dergi Tarandığı Indeksler SCI
Makale Dili İngilizce
Basım Tarihi 09-2015
Cilt No 85
Sayfalar 599 / 607
Doi Numarası 10.1016/j.spmi.2015.06.030
Makale Linki https://linkinghub.elsevier.com/retrieve/pii/S0749603615300550
BM Sürdürülebilir Kalkınma Amaçları
Atıf Sayıları
WoS 9
SCOPUS 9
Google Scholar 12
Quantum size effect on the electronic transitions of GaAs/AlGaAs dots under twisted light

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