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A Study on the Electronic Properties of SiOxNy/p-Si Interface      
Yazarlar
Doç. Dr. Abdullah AKKAYA Doç. Dr. Abdullah AKKAYA
Kırşehir Ahi Evran Üniversitesi
B. Boyarbay
H. Cetin
K. Yildizli
E. Ayyildiz
Özet
In this study, we investigated the electrical properties of Sn/SiOxNy/p-Si metal-insulator layer-semiconductor (MIS) structure. Silicon oxynitride (SiOxNy) thin film was grown on chemically cleaned p-Si substrate by the plasma nitridation process. The chemical composition and surface morphology of the thin film were analyzed using X-ray photoelectron spectroscopy (XPS) and atomic force microscopy (AFM). Electrical measurements of the devices (e.g. current-voltage (I-V ), capacitance-voltage (C-V ), capacitance and conductance-frequency characteristics (C-f and G-f )) were performed at room temperature. The characteristic parameters of the SiOxNy/p-Si interface such as energy position, interface state density and relaxation time constant were obtained from admittance measurements over a wide range of frequencies (from 1 to 500 kHz) for the values of the forward bias between 0.0 V V 1.1 V. The values of the interface state density and their relaxation time constant changed from 3.684 x 10(13) cm(-2) eV(-1) to 3.216 x 10(12) cm(-2)eV(-1) and from 1.770 x 10(-5) s to 6.277 x 10(-7) s, respectively. The obtained values of the interface state density were compared to those of the oxides grown by the other techniques. The experimental results clearly show that the density and location of interface states has a significant effect on electrical characteristics of the MIS structure.
Anahtar Kelimeler
Silicon oxynitride | Metal-insulator-semiconductor structure | Schottky barrier | Interface states | Series resistance | X-ray photoelectron spectroscopy
Makale Türü Özgün Makale
Makale Alt Türü SSCI, AHCI, SCI, SCI-Exp dergilerinde yayımlanan tam makale
Dergi Adı SILICON
Dergi ISSN 1876-990X
Dergi Tarandığı Indeksler SCI-Expanded
Makale Dili İngilizce
Basım Tarihi 11-2018
Cilt No 10
Sayı 6
Sayfalar 2717 / 2725
Doi Numarası 10.1007/s12633-018-9811-6
Makale Linki http://link.springer.com/10.1007/s12633-018-9811-6
BM Sürdürülebilir Kalkınma Amaçları
Atıf Sayıları
WoS 10
SCOPUS 11
Google Scholar 12
A Study on the Electronic Properties of SiOxNy/p-Si Interface

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