A Study on the Electronic Properties of SiOxNy/p-Si Interface
Yazarlar (5)
Doç. Dr. Abdullah AKKAYA Kırşehir Ahi Evran Üniversitesi, Türkiye
B. Boyarbay
Erciyes Üniversitesi, Türkiye
Erciyes Üniversitesi, Türkiye
H. Çetin
Yozgat Bozok University, Türkiye
Yozgat Bozok University, Türkiye
K. Yıldızlı
Ondokuz Mayis Üniversitesi, Türkiye
Ondokuz Mayis Üniversitesi, Türkiye
E. Ayyıldız
Erciyes Üniversitesi, Türkiye
Erciyes Üniversitesi, Türkiye
| Makale Türü | Özgün Makale (SSCI, AHCI, SCI, SCI-Exp dergilerinde yayınlanan tam makale) | ||
| Dergi Adı | Silicon | ||
| Dergi ISSN | 1876-990X Wos Dergi Scopus Dergi | ||
| Dergi Tarandığı Indeksler | SCI-Expanded | ||
| Makale Dili | İngilizce | Basım Tarihi | 11-2018 |
| Cilt / Sayı / Sayfa | 10 / 6 / 2717–2725 | DOI | 10.1007/s12633-018-9811-6 |
| Makale Linki | http://link.springer.com/10.1007/s12633-018-9811-6 | ||
| UAK Araştırma Alanları |
Yarı İletkenler
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| Özet |
| In this study, we investigated the electrical properties of Sn/SiOxNy/p-Si metal-insulator layer-semiconductor (MIS) structure. Silicon oxynitride (SiOxNy) thin film was grown on chemically cleaned p-Si substrate by the plasma nitridation process. The chemical composition and surface morphology of the thin film were analyzed using X-ray photoelectron spectroscopy (XPS) and atomic force microscopy (AFM). Electrical measurements of the devices (e.g. current-voltage (I-V ), capacitance-voltage (C-V ), capacitance and conductance-frequency characteristics (C-f and G-f )) were performed at room temperature. The characteristic parameters of the SiOxNy/p-Si interface such as energy position, interface state density and relaxation time constant were obtained from admittance measurements over a wide range of frequencies (from 1 to 500 kHz) for the values of the forward bias between 0.0 V ≤ V ≤ 1.1 V. The values of … |
| Anahtar Kelimeler |
| Interface states | Metal–insulator–semiconductor structure | Schottky barrier | Series resistance | Silicon oxynitride | X-ray photoelectron spectroscopy |
BM Sürdürülebilir Kalkınma Amaçları
| Atıf Sayıları | |
| Web of Science | 12 |
| Scopus | 13 |
| Google Scholar | 15 |