Effect of Post Annealing on Electrical Properties of (Ni/Au)/Al0.20Ga0.80N Schottky Contacts
Yazarlar (2)
Doç. Dr. Abdullah AKKAYA Kırşehir Ahi Evran Üniversitesi, Türkiye
Enise Ayyildiz Erciyes Üniversitesi, Türkiye
| Makale Türü | Özgün Makale (SCOPUS dergilerinde yayınlanan tam makale) | ||
| Dergi Adı | MATERIALS TODAY-PROCEEDINGS | ||
| Dergi ISSN | 2214-7853 | ||
| Dergi Tarandığı Indeksler | Scopus, Conference Proceedings Citation Index, INSPEC | ||
| Makale Dili | Türkçe | Basım Tarihi | 01-2016 |
| Kabul Tarihi | – | Yayınlanma Tarihi | 01-01-2016 |
| Cilt / Sayı / Sayfa | 3 / 5 / 1248–1254 | DOI | 10.1016/j.matpr.2016.03.067 |
| Makale Linki | https://linkinghub.elsevier.com/retrieve/pii/S2214785316002790 | ||
| Özet |
| The effects of thermal annealing on the electrical properties of Ni/Au Schottky contacts on n-type AlxGa1-xN (x=0.20) were investigated by current-voltage (I-V) and capacitance-voltage (C-V) measurements. The Schottky barrier height (SBH) of as-deposited contacts was found to be 0.946±0.033 eV (from I-V) and 1.120±0.047 eV (from C-V) with an ideality factor of 1.655±0.137. The values of SBH obtained from the C-V measurements were found to be higher than that of obtained from the I-V measurements. This was attributed to the presence of the lateral inhomogeneities of the barrier height. The values of SBH slightly increased after the annealing temperatures at 300, 400 and 500 °C. The highest value of SBH for Ni/Au Schottky contact was obtained after annealing at 600 °C and the value was 1.521±0.032 eV. The good performance of the annealed Ni/Au contact can be attributed to reaction of Ni with the GaN … |
| Anahtar Kelimeler |
| Schottky barrier height | AlGaN | Electrical properties | Barrier inhomogeneity | Thermal annealing |
Science Direct
Effect of Post Annealing on Electrical Properties of (Ni/Au)/Al0.20Ga0.80N Schottky Contacts
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| Google Scholar | 1 |