| Yazarlar |
Doç. Dr. Abdullah AKKAYA
Kırşehir Ahi Evran Üniversitesi |
Enise Ayyildiz
|
|
Enise Ayyildiz
|
| Özet |
| Post annealing is a simple, effective and suitable method for improving the diode parameters, especially when the used chemically stable substrates like Si, III-N and ternary alloys. In our work, we were applied this method to (Ni/Au)/Al0.09Ga0.91N Schottky Barrier Diodes (SBDs) and investigated by temperature-dependent current-voltage (I-V-T) characteristics at optimum conditions. Optimum annealing temperature was 600 degrees C, which it's determined with respect to have a highest barrier height value. The temperature-dependent electrical characteristics of the annealed at 600 degrees C (Ni/Au)/Al0.09Ga0.91N SBDs were investigated in the wide temperature range of 95-315K. The diode parameters such as ideality factor (n) and Schottky barrier height (Phi(b0)) were obtained to be strongly temperature dependent. The observed variation in Phi(b0) and n can be attributed to the spatial barrier inhomogeneities in Schottky barrier height by assuming a triple Gaussian distribution (TGD) of barrier heights (BHs) at 95-145K, 145-230K and 230-315K. The modified Richardson plots and T-0 analysis was performed to provide an experimental Richardson constants and bias coefficients of the mean barrier height. Furthermore, the chemical composition of the contacts was examined by the XPS depth profile analysis. |
| Anahtar Kelimeler |
| Makale Türü | Özgün Makale |
| Makale Alt Türü | SCOPUS dergilerinde yayımlanan tam makale |
| Dergi Adı | INTERNATIONAL PHYSICS CONFERENCE AT THE ANATOLIAN PEAK (IPCAP2016) |
| Dergi ISSN | 1742-6588 |
| Dergi Tarandığı Indeksler | Conference Proceedings Citation Index—Science (CPCI-S) (Clarivate, Web of Science) Chemical Abstracts Service, Scopus |
| Makale Dili | Türkçe |
| Basım Tarihi | 01-2016 |
| Cilt No | 707 |
| Sayfalar | 12015 / 12014 |
| Doi Numarası | 10.1088/1742-6596/707/1/012015 |
| Atıf Sayıları | |
| WoS | 6 |
| Google Scholar | 9 |
