Depth profile study on Ti/Al bilayer Ohmic contacts to AlGaN/GaN
Yazarlar (2)
Doç. Dr. Abdullah AKKAYA Kırşehir Ahi Evran Üniversitesi, Türkiye
Prof. Dr. Enise Ayyıldız Erciyes Üniversitesi, Türkiye
| Makale Türü | Özgün Makale (SCOPUS dergilerinde yayınlanan tam makale) | ||
| Dergi Adı | Materials Today: Proceedings | ||
| Dergi ISSN | 2214-7853 Dergi Bilgileri (2021) | ||
| Dergi Tarandığı Indeksler | Scopus, Conference Proceedings Citation Index, INSPEC | ||
| Makale Dili | Türkçe | Basım Tarihi | 01-2021 |
| Cilt / Sayı / Sayfa | 46 / 16 / 6939–6946 | DOI | 10.1016/j.matpr.2021.03.268 |
| Makale Linki | https://linkinghub.elsevier.com/retrieve/pii/S221478532102318X | ||
| UAK Araştırma Alanları |
Yarı İletkenler
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| Özet |
| The electrical performance of double layered Ohmic contacts not only depends on layer thicknesses, annealing temperatures and annealing time etc. but also Ohmic contact metals and reactions with substrates and each other. Furthermore, oxidation tendency of Ohmic contact metals is highly important for contact quality and stability. In this study, we have investigated Ti/Al Ohmic contact formation on undoped AlGaN substrates by X-ray photoelectron spectroscopy (XPS) depth profile analysis. We aimed to reveal the oxide compounds and reaction products of metals and dependencies to the contact depth. In survey mode and depth profile mode five atoms core level (Ga 3d, Al 2p, N 1 s, Ti 2p and O 1 s) was observed and the XPS core level peaks were convoluted with Gaussian profiles to identify the origin of the peaks. Our results show that Ohmic contact metals strongly incorporated with oxygen, leading to high … |
| Anahtar Kelimeler |
| TLM | XPS | Depth profile | Ohmic contact | TiAl3 metallic alloy |
Science Direct
Depth profile study on Ti/Al bilayer Ohmic contacts to AlGaN/GaN
BM Sürdürülebilir Kalkınma Amaçları
| Atıf Sayıları | |
| Web of Science | 3 |
| Scopus | 3 |
| Google Scholar | 3 |