Simultaneously-doping of HfO2 thin films by Ni with sputtering technique and effect of post annealing on structural and electrical properties
     
Yazarlar (4)
Doç. Dr. Abdullah AKKAYA Kırşehir Ahi Evran Üniversitesi, Türkiye
Osman Kahveci Erciyes Üniversitesi, Türkiye
Bunyamin Sahin Necmettin Erbakan Üniversitesi, Türkiye
Enise Ayyildiz Erciyes Üniversitesi, Türkiye
Makale Türü Özgün Makale (SSCI, AHCI, SCI, SCI-Exp dergilerinde yayınlanan tam makale)
Dergi Adı Physica B Condensed Matter (Q2)
Dergi ISSN 0921-4526 Wos Dergi Scopus Dergi
Dergi Tarandığı Indeksler SCI-Expanded
Makale Dili İngilizce Basım Tarihi 09-2023
Cilt / Sayı / Sayfa 665 / 1 / 415034–0 DOI 10.1016/j.physb.2023.415034
Makale Linki http://dx.doi.org/10.1016/j.physb.2023.415034
Özet
This article reports a detailed structural and electrical characterization study of Ni:HfO2 dielectrics grown by rf and dc sputtering and variations in the rapid thermal annealing temperature. Annealing produced obvious changes in the morphological structure of films and XRD confirmed that the crystallite size increased from 1.3 nm to 14.4 nm with the annealing temperature. XPS showed that the amount of non-lattice oxygen decreased owing to the effects of annealing and resistivity. Dc resistivity measurements showed that the lowest sheet resistance of 1.182 × 106 Ω/□ was achieved by as-deposited films and increased to 70.960 Ω/□ with annealing. Structural differences in films due to the effect of annealing caused equivalent circuit models to vary and different resistance values in electrochemical impedance spectrometry. This study illustrates that HfO2 thin films, boosted by doping and rapid thermal annealing …
Anahtar Kelimeler
Hafnium oxide | Sputtering | Thin film | HfO2-Ni Alloy | Dc resistivity | EIS