| Makale Türü | Özgün Makale (SSCI, AHCI, SCI, SCI-Exp dergilerinde yayınlanan tam makale) | ||
| Dergi Adı | Physica B Condensed Matter (Q2) | ||
| Dergi ISSN | 0921-4526 Wos Dergi Scopus Dergi | ||
| Dergi Tarandığı Indeksler | SCI-Expanded | ||
| Makale Dili | İngilizce | Basım Tarihi | 09-2023 |
| Cilt / Sayı / Sayfa | 665 / 1 / 415034–0 | DOI | 10.1016/j.physb.2023.415034 |
| Makale Linki | http://dx.doi.org/10.1016/j.physb.2023.415034 | ||
| Özet |
| This article reports a detailed structural and electrical characterization study of Ni:HfO2 dielectrics grown by rf and dc sputtering and variations in the rapid thermal annealing temperature. Annealing produced obvious changes in the morphological structure of films and XRD confirmed that the crystallite size increased from 1.3 nm to 14.4 nm with the annealing temperature. XPS showed that the amount of non-lattice oxygen decreased owing to the effects of annealing and resistivity. Dc resistivity measurements showed that the lowest sheet resistance of 1.182 × 106 Ω/□ was achieved by as-deposited films and increased to 70.960 Ω/□ with annealing. Structural differences in films due to the effect of annealing caused equivalent circuit models to vary and different resistance values in electrochemical impedance spectrometry. This study illustrates that HfO2 thin films, boosted by doping and rapid thermal annealing … |
| Anahtar Kelimeler |
| Hafnium oxide | Sputtering | Thin film | HfO2-Ni Alloy | Dc resistivity | EIS |
| Dergi Adı | PHYSICA B-CONDENSED MATTER |
| Yayıncı | Elsevier B.V. |
| Açık Erişim | Hayır |
| ISSN | 0921-4526 |
| E-ISSN | 1873-2135 |
| CiteScore | 5,0 |
| SJR | 0,506 |
| SNIP | 0,862 |