Electronic, Elastic, Vibrational and Thermodynamic Properties of HfIrX (X = As, Sb and Bi) Compounds: Insights from DFT-Based Computer Simulation
Yazarlar (4)
Nihat Arıkan Kırşehir Ahi Evran Üniversitesi, Türkiye
Gökçen Dikici Yıldız Kirikkale Üniversitesi, Türkiye
Yasin Göktürk Yıldız Kirikkale Üniversitesi, Türkiye
Prof. Dr. Ahmet İYİGÖR Kırşehir Ahi Evran Üniversitesi, Türkiye
Makale Türü Açık Erişim Özgün Makale (SSCI, AHCI, SCI, SCI-Exp dergilerinde yayınlanan tam makale)
Dergi Adı Journal of Electronic Materials
Dergi ISSN 0361-5235 Wos Dergi Scopus Dergi
Dergi Tarandığı Indeksler SCI-Expanded
Makale Dili İngilizce Basım Tarihi 05-2020
Kabul Tarihi 17-02-2020 Yayınlanma Tarihi 27-02-2020
Cilt / Sayı / Sayfa 49 / 5 / 3052–3062 DOI 10.1007/s11664-020-08029-6
Makale Linki http://link.springer.com/10.1007/s11664-020-08029-6
Özet
Ab-initio calculations were performed to reveal and thoroughly understand the structural, electronic, elastic, thermodynamic and vibrational properties of HfIrX (X = As, Sb and Bi) compounds in the C1b phase. Basic physical characteristics, such as bulk modulus, pressure derivative of bulk modulus, anisotropy factor, shear modulus, Poisson’s ratio, Cauchy pressure, elastic constants and Young’s modulus were obtained and some of them were compared with those in the literature. Electronic band structure, the density of states and phonon dispersion curves were obtained and compared with current theoretical calculations. It was concluded according to current band structure calculations that the HfIrAs and HfIrBi compounds showed semimetal characteristics, while the HfIrSb compound behaves as a semiconductor. It was determined based on phonon calculations that all three compounds were dynamically …
Anahtar Kelimeler
Ab-initio | DFT | elastic constant | electronic structure | phonon | thermodynamic