Performance studies on inversion channels of nMOSFETs under extreme mechanical load
Yazarlar (3)
| Bildiri Türü | Tebliğ/Bildiri | Bildiri Dili | İngilizce |
| Bildiri Alt Türü | Tam Metin Olarak Yayınlanan Tebliğ (Uluslararası Kongre/Sempozyum) | ||
| Bildiri Niteliği | Web of Science Kapsamındaki Kongre/Sempozyum | ||
| DOI Numarası | 10.1109/ICSENS.2004.1426494 | ||
| Kongre Adı | IEEE Sensors 2004 Conference | ||
| Kongre Tarihi | 24-10-2004 / 27-10-2004 | ||
| Basıldığı Ülke | Avusturya | Basıldığı Şehir | Vienna |
| Özet |
| Test chips containing nMOSFETs with different gate orientations were processed on a (100) silicon wafer using a 0.65 mu m CMOS technology, The wafer was diced into strips. The strips were thinned down to a thickness t of 65 mu m and bended parallel to the [110]-direction through a four-point bending fixture. For the first time uniaxial mechanical stress up to 350 MPa was applied externally to the strips. In order to get reference values thick strips of 300 pm thickness were also investigated. The drain current ID was measured for different. bending stress values. The relative current change Delta I(D)/I(D) shows a linear behavior with respect to the applied stress. No other effect than piezoresistance plays a major role in changing the current in stressed thin chips. |
| Anahtar Kelimeler |
| thin chips | MOSFETs | transistors | piezoresistivity | mechanical stress | silicon |
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