| Yazarlar (1) |
Doç. Dr. Cengiz SOYKAN
Kırşehir Ahi Evran Üniversitesi, Türkiye |
| Özet |
| Boron nitride (BN) is a semiconductor material that stands out with its various polymorphic structures and diverse potential applications. Among these, cubic boron nitride (c-BN) has been extensively studied due to its remarkable thermodynamic properties, such as extreme hardness, chemical inertness, high melting point (under high pressure), excellent thermal conductivity, and wide band gap. These properties make c-BN an ideal material for numerous industrial applications, including abrasives, protective coatings, and microelectronic devices. Recently, another polymorph, hexagonal boron nitride (h-BN), has been successfully synthesized as a single crystal with a direct band gap of 5.97 eV (Watanabe et al., 2004; Evans et al., 2008; Zupan et al., 1972; Zunger et al., 1976; Hoffman et al., 1984). This characteristic enables ultraviolet laser emission at 215 nm, paving the way for innovative technologies such as compact ultraviolet lasers, optical data |
| Anahtar Kelimeler |
| Kitap Adı | STUDY OF STRUCTURAL AND ELECTRONIC PROPERTIES OF h-BN USING AB-INITIO METHODS |
| Bölüm(ler) | STUDY OF STRUCTURAL AND ELECTRONIC PROPERTIES OF h-BN USING AB-INITIO METHODS |
| Bölüm Sayfaları | 42-58 |
| Kitap Türü | Kitap Bölümü |
| Kitap Alt Türü | Alanında uluslararası yayınlanan kitap bölümü |
| Kitap Niteliği | Alanında tanınmış ulusal bir yayınevince basılan bilimsel kitap |
| Kitap Dili | İngilizce |
| Basım Tarihi | 12-2024 |
| ISBN | 978-625-6171-19-0 |
| Basıldığı Ülke | Türkiye |
| Basıldığı Şehir |
