img
An ab initio study on half-metallicity and lattice dynamics stability of ternary half-Heusler vanadium antimonides: VXSb (X = Co, Rh, and Ir)      
Yazarlar
Aytaç Erkişi
Pamukkale Üniversitesi, Türkiye
 Abdullah CANDAN Abdullah CANDAN
Kırşehir Ahi Evran Üniversitesi, Türkiye
Özet
Ternary half-Heusler VXSb (X = Co, Rh, and Ir) antimonides having C1b cubic crystal structure and conforming to F (4) over bar 3m space group with 216 space number, have been investigated in alpha, beta, and gamma structural phases with ab initio simulation methods. First, the gamma phase was found to be the most favorable atomic arrangement from the enthalpies of formation and energy-volume curves calculated for these materials. Then, the electronic nature, some mechanical properties, and lattice dynamical stability were investigated in the most stable gamma phase. While examining the electronic behavior of these compounds, both GGA + PBE and mBJ approaches have been used to observe the band gaps. As a result of the electronic band structure calculations, it is understood that these compounds have a half-metallic nature with 100% spin polarization. In addition, the total magnetic moments of these half-metallic ferromagnets are found to have an integer value of 1 mu B per formula, which is consistent with the Slater-Pauling rule. These crystal systems have mechanical stability because the elastic constants satisfy the Born-Huang stability criteria. Besides, it has been observed that the materials exhibit ductile and anisotropic behavior. Finally, phonon dispersion curves and some thermodynamic properties for these systems were obtained and it was seen that they have lattice dynamics stability. The results obtained in this study show that these compounds are suitable candidates for spintronic applications at room temperature.
Anahtar Kelimeler
Half-Heusler, Half-metallicity, Ab initio calculations, Mechanical properties, Phonon
Makale Türü Özgün Makale
Makale Alt Türü SSCI, AHCI, SCI, SCI-Exp dergilerinde yayımlanan tam makale
Dergi Adı Materials Science in Semiconductor Processing
Dergi ISSN 1369-8001
Dergi Tarandığı Indeksler SCI-Expanded
Dergi Grubu Q2
Makale Dili İngilizce
Basım Tarihi 11-2023
Cilt No 167
Sayı 1
Doi Numarası 10.1016/j.mssp.2023.107815
Makale Linki http://dx.doi.org/10.1016/j.mssp.2023.107815