Poly 3 Hexylthıophene Based Field Effect Transıstors With Gate SiO2 Dielectric
Yazarlar (1)
| Makale Türü | Özgün Makale (Diğer hakemli ulusal dergilerde yayınlanan tam makale) | ||
| Dergi Adı | Sakarya Üniversitesi Fen Edebiyat Fakültesi Dergisi | ||
| Dergi ISSN | 1301-3769 | ||
| Makale Dili | Türkçe | Basım Tarihi | 12-2011 |
| Cilt / Sayı / Sayfa | 13 / 2 / 1–7 | DOI | – |
| Makale Linki | http://www.fed.sakarya.edu.tr/yayinlanmis_sayilar_2011_2.htm | ||
| Özet |
| In this study we have used SiO2, which is actually a useful material as a inorganic dielectric layer for Organic Thin Film Transistor (OTFT) production, and then we have coated the Poly(3-Hexilthiophene) P3HT organic semiconductor (OSC). We coated the gate, source and drain contacts with Ag using thermal evaporation method. Our study has shown that... |
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